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Phoenix, AZ - ON Semiconductor introduced three new dual MOSFETs offered in an ultra-small SOT-963 package and optimized for space-constrained portable electronics. Measuring 1.0 mm x 1.0 mm, the SOT-963 offers 30 percent smaller mount area than comparable MOSFET solutions offered in a single SOT-723 package and a 60 percent smaller footprint than SOT-563 devices. With a low vertical clearance of 0.5 mm, the new SOT-963 packaged NTUD312x devices satisfy the requirements of the new generation ultra-thin handheld portable devices.

The NTUD312x devices have On-Resistance values rated at 1.5 volt (V) gate to source to enable operation at low voltage logic level. NTUD3127C is a 20 V, 200 milliampere (mA) / -180 mA complementary small signal MOSFET. The NTUD3128N is a 20 V, 200 mA Dual N-Channel MOSFET. The NTUD3129P is a -20 V, -180 mA Dual P-Channel MOSFET.

SOURCE: ON Semiconductor